onsemi
NTBG020N090SC1
MFR #NTBG020N090SC1
FPN#NTBG020N090SC1-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 900V 9.8A(Ta) 112A(Tc) 3.7W(Ta) 477W(Tc) Surface Mount, TO-263-8
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTBG020N090SC1 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Affected |
| Package Type | D2PAK-7 |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 900V |
| Drive Voltage | 15V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +22V, -8V |
| Input Capacitance | 4415pF |
| Input Capacitance Test Voltage | 450V |
| Maximum Continuous Drain Current | 9.8A (Ta), 112A (Tc) |
| Maximum Drain to Source Resistance | 28 mOhm @ 60A, 15V |
| Maximum Gate to Source Threshold Voltage | 4.3V @ 20mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.7W (Ta), 477W (Tc) |
| Maximum Pulse Drain Current | 448A |
| Maximum Total Gate Charge | 200nC |
| Maximum Total Gate Charge Test Voltage | 15V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 56nC |
| Typical Gate to Source Charge | 76nC |