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NTB45N06LT4G
MFR #NTB45N06LT4G
FPN#NTB45N06LT4G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount, TO-263-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NTB45N06L | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 800 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 60V | 
| Drive Voltage | 5V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±15V | 
| Input Capacitance | 1700pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 45A (Ta) | 
| Maximum Drain to Source Resistance | 28 mOhm @ 22.5A, 5V | 
| Maximum Gate to Source Threshold Voltage | 2V @ 250µA | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Power Dissipation | 2.4W (Ta), 125W (Tj) | 
| Maximum Pulse Drain Current | 150A | 
| Maximum Total Gate Charge | 32nC | 
| Maximum Total Gate Charge Test Voltage | 5V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | D2PAK-3 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | N/A | 
| Typical Gate to Source Charge | N/A | 
