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NTB011N15MC
onsemi

NTB011N15MC

MFR #NTB011N15MC

FPN#NTB011N15MC-FL

MFRonsemi

Part DescriptionN-Channel 150 V 12.5A (Ta), 75.4A (Tc) 3.75W (Ta), 136.4W (Tc) Surface Mount, TO-263-3
Datasheet
56578-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTB011N15MC
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage8V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2810pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current12.5A (Ta), 75.4A (Tc)
Maximum Drain to Source Resistance10.9 mOhm @ 41A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 223µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.75W (Ta), 136.4W (Tc)
Maximum Pulse Drain Current323A
Maximum Total Gate Charge37nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.5nC
Typical Gate to Source Charge15nC