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onsemi

NTAT6H406NT4G

MFR #NTAT6H406NT4G

FPN#NTAT6H406NT4G-FL

MFRonsemi

Part DescriptionN-Channel 80 V 175A (Ta) 90W (Tc) Surface Mount DPAK/ATPAK
Datasheet
56577-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTAT6H406N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance8040pF
Input Capacitance Test Voltage40V
Life Cycle StatusObsolete
Maximum Continuous Drain Current175A (Ta)
Maximum Drain to Source Resistance2.9 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation90W (Tc)
Maximum Pulse Drain Current600A
Maximum Total Gate Charge110nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK/ATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge31.8nC
Typical Gate to Source Charge32.4nC