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onsemi

NSS35200CF8T1G

MFR #NSS35200CF8T1G

FPN#NSS35200CF8T1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 35 V 2 A 100MHz 635 mW Surface Mount ChipFET
Datasheet
56410-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSS35200CF8T1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth100MHz
Life Cycle StatusObsolete
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage35V
Maximum Collector Emitter Saturation Voltage300mV @ 20mA, 2A
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation635mW
Minimum DC Current Gain100 @ 2A, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeChipFET™
Technology TypeSI
Transistor TypeSingle