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NSS20201DMTTBG
onsemi

NSS20201DMTTBG

MFR #NSS20201DMTTBG

FPN#NSS20201DMTTBG-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor
Datasheet
56406-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSS20201DMT
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Configuration2 NPN
Gain Bandwidth180MHz
Life Cycle StatusActive
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage20V
Maximum Collector Emitter Saturation Voltage330mV @ 200mA, 2A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.8W
Minimum DC Current Gain250 @ 100mA, 2V
Minimum Operating Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package Type6-WDFN (2x2)
Technology TypeN/A
Transistor TypeArray