(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NSS12501UW3T2G

MFR #NSS12501UW3T2G

FPN#NSS12501UW3T2G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 12V 5A 150MHz 875mW Surface Mount, 3-DFN
Datasheet
100666-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSS12501UW3T2G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth150MHz
Life Cycle StatusActive
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage12V
Maximum Collector Emitter Saturation Voltage120mV @ 400mA, 4A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation875mW
Minimum DC Current Gain200 @ 3A, 2V
Minimum Operating Temperature-55°C (TJ)
Package Type3-WDFN (2x2)
Technology TypeN/A
Transistor TypeSingle