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NSBC143EF3T5G

NSBC143EF3T5G

MFR #NSBC143EF3T5G

FPN#NSBC143EF3T5G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN Pre-Biased 50V 100mA 254mW Surface Mount, SOT-1123
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSBC143EF3T5G
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Base Resistance - R14.7 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R24.7 kOhm
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base VoltageN/A
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 1mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation297mW
Minimum DC Current Gain15 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-1123
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeSingle