NSBA143EDXV6T1G
MFR #NSBA143EDXV6T1G
FPN#NSBA143EDXV6T1G-FL
MFRonsemi
Part DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA - 500mW Surface Mount SOT-563
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NSBA143EDXV6 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 4000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Base Resistance - R1 | 4.7 kOhm |
| Configuration | 2 PNP - Pre-Biased |
| Emitter Base Resistance - R2 | 4.7 kOhm |
| Gain Bandwidth | N/A |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector Current | 100mA |
| Maximum Collector Emitter Breakdown Voltage | 50V |
| Maximum Collector Emitter Saturation Voltage | 250mV @ 300µA, 10mA |
| Maximum Cutoff Collector Current | 500nA |
| Maximum Emitter Base Voltage | N/A |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 500mW |
| Minimum DC Current Gain | 15 @ 5mA, 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 74% from Suppliers use this Dimension |
| Package Type | SOT-563 |
| Resistor Ratio R1 R2 | 1 |
| Technology Type | N/A |
| Transistor Type | Array |