(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NSBA114TDXV6T1G
onsemi

NSBA114TDXV6T1G

MFR #NSBA114TDXV6T1G

FPN#NSBA114TDXV6T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount, SOT-563-6
Datasheet
56271-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSBA114TDXV6
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R110 kOhm
Configuration2 PNP - Pre-Biased
Emitter Base Resistance - R2N/A
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation500mW
Minimum DC Current Gain160 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package TypeSOT-563
Resistor Ratio R1 R2N/A
Technology TypeN/A
Transistor TypeArray