(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NJVMJB44H11T4G
onsemi

NJVMJB44H11T4G

MFR #NJVMJB44H11T4G

FPN#NJVMJB44H11T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount DPAK
Datasheet
55707-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJB44H11
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth50MHz
Life Cycle StatusActive
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage1V @ 400mA, 8A
Maximum Cutoff Collector Current10µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation2W
Minimum DC Current Gain60 @ 2A, 1V
Minimum Operating Temperature-55°C (TJ)
Package TypeD2PAK-3
Technology TypeSI
Transistor TypeSingle