
NGTG20N60L2TF1G
MFR #NGTG20N60L2TF1G
FPN#NGTG20N60L2TF1G-FL
MFRonsemi
Part DescriptionIGBT-Single 600V 40A 64W Through Hole, TO-3P-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NGTG20N60L2TF1G |
Packaging Type | Tube |
Packaging Quantity | 30 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 84nC |
IGBT Type | N/A |
Input Type | Standard |
Life Cycle Status | Obsolete |
Maximum Collector Current | 40A |
Maximum Collector Emitter Breakdown Voltage | 600V |
Maximum Collector Emitter Saturation Voltage | 1.65V @ 15V, 20A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 64W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-3PF-3 |
Pulsed Collector Current | 105A |
Reverse Recovery Time | N/A |
Switching Off Delay Time | 193ns |
Switching Off Energy | N/A |
Switching On Delay Time | 60ns |
Switching On Energy | N/A |
Technology Type | SI |