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NDT3055L
onsemi

NDT3055L

MFR #NDT3055L

FPN#NDT3055L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 60V 4A (Ta) SOT223-4
Datasheet
55602-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDT3055L
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance345pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current4A (Ta)
Maximum Drain to Source Resistance100 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.1W (Ta)
Maximum Pulse Drain Current25A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-65°C (TJ)
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.2nC
Typical Gate to Source Charge1.7nC