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NDS9945
onsemi

NDS9945

MFR #NDS9945

FPN#NDS9945-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 60V 3.5A (Ta) 8-SOIC T/R
Datasheet
137007-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDS9945
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance345pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current3.5A (Ta)
Maximum Drain to Source Resistance100 mOhm @ 3.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.2nC
Typical Gate to Source Charge1.7nC