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NDP6060
onsemi

NDP6060

MFR #NDP6060

FPN#NDP6060-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 48A (Tc) TO-220-3 Tube
Datasheet
165674-Datasheet
Quote Only
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Multiples of: 800
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDP6060
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-220-3
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1800pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current48A (Tc)
Maximum Drain to Source Resistance25 mOhm @ 24A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation100W (Tc)
Maximum Pulse Drain Current144A
Maximum Total Gate Charge70nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-65°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge22nC
Typical Gate to Source Charge7.6nC