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NCV1413BDR2G
onsemi

NCV1413BDR2G

MFR #NCV1413BDR2G

FPN#NCV1413BDR2G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA - - Surface Mount 16-SOIC
Datasheet
55084-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNCV1413BDR2G
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Configuration7 NPN Darlington
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base VoltageN/A
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage1.6V @ 500µA, 350mA
Maximum Cutoff Collector Current100µA
Maximum Emitter Base VoltageN/A
Maximum Operating Temperature150°C (TJ)
Maximum Power DissipationN/A
Minimum DC Current Gain1000 @ 350mA, 2V
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type16-SOIC
Technology TypeN/A
Transistor TypeArray