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onsemi

MUN5316DW1T1G

MFR #MUN5316DW1T1G

FPN#MUN5316DW1T1G-FL

MFRonsemi

Part DescriptionDigital BJT Array 50V 100mA 250mW SOT-363
Datasheet
123022-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMUN5316DW1T1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R14.7 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R2N/A
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base VoltageN/A
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation250mW
Minimum DC Current Gain160 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
Resistor Ratio R1 R2N/A
Technology TypeN/A
Transistor TypeArray