MUN5312DW1T2G
MFR #MUN5312DW1T2G
FPN#MUN5312DW1T2G-FL
MFRonsemi
Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MUN5312DW1 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Base Resistance - R1 | 22 kOhm |
| Configuration | 1 NPN, 1 PNP - Pre-Biased |
| Emitter Base Resistance - R2 | 22 kOhm |
| Gain Bandwidth | N/A |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | 50V |
| Maximum Collector Current | 100mA |
| Maximum Collector Emitter Breakdown Voltage | 50V |
| Maximum Collector Emitter Saturation Voltage | 250mV @ 300µA, 10mA |
| Maximum Cutoff Collector Current | 500nA |
| Maximum Emitter Base Voltage | N/A |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 256mW |
| Minimum DC Current Gain | 60 @ 5mA, 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
| Package Type | SC-88/SC70-6/SOT-363 |
| Resistor Ratio R1 R2 | 1 |
| Technology Type | N/A |
| Transistor Type | Array |