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MUN5215T1G
onsemi

MUN5215T1G

MFR #MUN5215T1G

FPN#MUN5215T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount, SC-70-3
Datasheet
142105-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMUN5215T1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R110 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R2N/A
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 1mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation202mW
Minimum DC Current Gain160 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-70 (SOT323)
Resistor Ratio R1 R2N/A
Technology TypeN/A
Transistor TypeSingle