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MMUN2232LT1G
onsemi

MMUN2232LT1G

MFR #MMUN2232LT1G

FPN#MMUN2232LT1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount, SOT-23-3
Datasheet
52938-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMUN2232LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R14.7 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R24.7 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 1mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation246mW
Minimum DC Current Gain15 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-23-3 (TO-236)
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeSingle