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MMBTH10LT1G
onsemi

MMBTH10LT1G

MFR #MMBTH10LT1G

FPN#MMBTH10LT1G-FL

MFRonsemi

Part DescriptionRF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236)
Datasheet
52766-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBTH10L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)N/A
ConfigurationNPN
GainN/A
Gain Bandwidth650MHz
Life Cycle StatusActive
Maximum Collector Base Voltage30V
Maximum Collector CurrentN/A
Maximum Collector Emitter Breakdown Voltage25V
Maximum Emitter Base Voltage3V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation225mW
Minimum DC Current Gain60 @ 4mA, 10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Noise FigureN/A
Number of Elements1
Output Intercept Point (IP3)N/A
Output PowerN/A
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle