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MMBT918LT1G
onsemi

MMBT918LT1G

MFR #MMBT918LT1G

FPN#MMBT918LT1G-FL

MFRonsemi

Part DescriptionRF Transistor NPN 15V 50mA 600MHz 225mW Surface Mount, TO-236-3
Datasheet
52752-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT918LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package TypeSOT-23-3 (TO-236)
1dB Compression Point (P1dB)N/A
ConfigurationNPN
Gain11dB
Gain Bandwidth600MHz
Maximum Collector Base Voltage30V
Maximum Collector Current50mA
Maximum Collector Emitter Breakdown Voltage15V
Maximum Emitter Base Voltage3V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation225mW
Minimum DC Current Gain20 @ 3mA, 1V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Noise Figure6dB @ 60MHz
Number of Elements1
Output Intercept Point (IP3)N/A
Output Power30mW
Technology TypeSI
Transistor TypeSingle