(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
MMBT8099LT1G
onsemi

MMBT8099LT1G

MFR #MMBT8099LT1G

FPN#MMBT8099LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 80 V 500 mA 150MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
52751-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT8099LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth150MHz
Life Cycle StatusActive
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage400mV @ 5mA, 100mA
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain100 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle