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MMBT589LT1G
onsemi

MMBT589LT1G

MFR #MMBT589LT1G

FPN#MMBT589LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount, TO-236-3
Datasheet
150365-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT589LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth100MHz
Life Cycle StatusActive
Maximum Collector Current1A
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage650mV @ 200mA, 2A
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation310mW
Minimum DC Current Gain100 @ 500mA, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle