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MMBT5401LT1G
onsemi

MMBT5401LT1G

MFR #MMBT5401LT1G

FPN#MMBT5401LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 150V 500mA 300MHz 300mW Surface Mount, TO-236-3
Datasheet
52743-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT5401L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth300MHz
Life Cycle StatusActive
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage150V
Maximum Collector Emitter Saturation Voltage500mV @ 5mA, 50mA
Maximum Cutoff Collector Current50nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle