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MMBT3416LT3G
onsemi

MMBT3416LT3G

MFR #MMBT3416LT3G

FPN#MMBT3416LT3G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 40V 100mA 225mW Surface Mount, TO-236-3
Datasheet
139586-Datasheet
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT3416LT3G
Packaging TypeTape and Reel
Packaging Quantity10000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage300mV @ 3mA, 50mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain75 @ 2mA, 4.5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle