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MMBT2222LT1G
onsemi

MMBT2222LT1G

MFR #MMBT2222LT1G

FPN#MMBT2222LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
52712-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT2222L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth250MHz
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage1.6V @ 50mA, 500mA
Maximum Cutoff Collector Current10nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain100 @ 150mA, 10V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle