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MJH11019G
onsemi

MJH11019G

MFR #MJH11019G

FPN#MJH11019G-FL

MFRonsemi

Part DescriptionDarlington Bipolar (BJT) Transistor PNP 200V 15A 3MHz 150W Through Hole, TO-247-3
Datasheet
52008-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJH11019
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationPNP - Darlington
Gain Bandwidth3MHz
Life Cycle StatusActive
Maximum Collector Base Voltage200V
Maximum Collector Current15A
Maximum Collector Emitter Breakdown Voltage200V
Maximum Collector Emitter Saturation Voltage4V @ 150mA, 15A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation150W
Minimum DC Current Gain400 @ 10A, 5V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-247
Technology TypeSI
Transistor TypeSingle