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MJE210G
onsemi

MJE210G

MFR #MJE210G

FPN#MJE210G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 40V 5A 65MHz 15W Through Hole, TO-126-3
Datasheet
142587-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE210G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth65MHz
Life Cycle StatusObsolete
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage1.8V @ 1A, 5A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation15W
Minimum DC Current Gain70 @ 500mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle