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MJD3055RLG
MFR #MJD3055RLG
FPN#MJD3055RLG-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | MJD3055 |
Packaging Type | Tape and Reel |
Packaging Quantity | 1800 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | 2MHz |
Life Cycle Status | Active |
Maximum Collector Current | 10A |
Maximum Collector Emitter Breakdown Voltage | 60V |
Maximum Collector Emitter Saturation Voltage | 8V @ 3.3A, 10A |
Maximum Cutoff Collector Current | 50µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.75W |
Minimum DC Current Gain | 20 @ 4A, 4V |
Minimum Operating Temperature | -55°C (TJ) |
Package Type | DPAK |
Technology Type | SI |
Transistor Type | Single |