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MJB42CT4G
onsemi

MJB42CT4G

MFR #MJB42CT4G

FPN#MJB42CT4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount, TO-263-3
Datasheet
142599-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJB42C
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth3MHz
Life Cycle StatusActive
Maximum Collector Current6A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage1.5V @ 600mA, 6A
Maximum Cutoff Collector Current700µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation2W
Minimum DC Current Gain30 @ 300mA, 4V
Minimum Operating Temperature-65°C (TJ)
Package TypeD2PAK-3
Technology TypeSI
Transistor TypeSingle