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onsemi

MJ11033G

MFR #MJ11033G

FPN#MJ11033G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Datasheet
101023-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJ11033
Packaging TypeTray
Packaging Quantity100
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage120V
Maximum Collector Current50A
Maximum Collector Emitter Breakdown Voltage120V
Maximum Collector Emitter Saturation Voltage3.5V @ 500mA, 50A
Maximum Cutoff Collector Current2mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature200°C (TJ)
Maximum Power Dissipation300W
Minimum DC Current Gain1000 @ 25A, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-204 (TO-3)
Technology TypeSI
Transistor TypeSingle