(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
KSD560RTU
onsemi

KSD560RTU

MFR #KSD560RTU

FPN#KSD560RTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 5 A - 1.5 W Through Hole TO-220-3
Datasheet
47597-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD560
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage150V
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage1.5V
Maximum Cutoff Collector Current1µA
Maximum Emitter Base Voltage7V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W
Minimum DC Current Gain2000 @ 3A, 2V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle