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KSD1691GSTU
onsemi

KSD1691GSTU

MFR #KSD1691GSTU

FPN#KSD1691GSTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole, TO-126-3
Datasheet
47584-Datasheet
Quote Onlymore info
Multiples of: 1920more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD1691
Packaging TypeTube
Packaging Quantity1920
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusLast Time Buy
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage300mV @ 200mA, 2A
Maximum Cutoff Collector Current10µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Minimum DC Current Gain200 @ 2A, 1V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle