onsemi
KSD1691GSTU
MFR #KSD1691GSTU
FPN#KSD1691GSTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole, TO-126-3
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | KSD1691 |
| Packaging Type | Tube |
| Packaging Quantity | 1920 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-126-3 |
| Configuration | NPN |
| Gain Bandwidth | N/A |
| Maximum Collector Current | 5A |
| Maximum Collector Emitter Breakdown Voltage | 60V |
| Maximum Collector Emitter Saturation Voltage | 300mV @ 200mA, 2A |
| Maximum Cutoff Collector Current | 1µA (ICBO) |
| Maximum DC Current Gain | 400 @ 2A, 1V |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 1.3W |
| Minimum DC Current Gain | 200 @ 2A, 1V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Technology Type | SI |
| Transistor Type | Single |