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IXTH4N100L
Littelfuse

IXTH4N100L

MFR #IXTH4N100L

FPN#IXTH4N100L-FL

MFRLittelfuse

Part DescriptionMOSFET N-Channel 1000V 4A(Tc) Through Hole, TO-247-3

Legacy ManufacturerIxys

Datasheet
219219-Datasheet
Quote Only
more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIXTH4N100L
Packaging TypeTube
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247 (IXFH)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1kV
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1496pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current4A (Tc)
Maximum Drain to Source Resistance2.8 Ohm @ 2A, 20V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation290W (Tc)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge75nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge27nC
Typical Gate to Source Charge11.5nC