
Infineon
IRLTS6342TRPBF
MFR #IRLTS6342TRPBF
FPN#IRLTS6342TRPBF-FL
MFRInfineon
Part DescriptionMOSFET N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount, 6-TSOP
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRLTS6342 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | RoHS (2015/863), Unknown |
| RoHs China | Not Compliant |
| Package Type | PG-SOT23-6 |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 1010pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 8.3A (Ta) |
| Maximum Drain to Source Resistance | 17.5 mOhm @ 8.3A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.1V @ 10µA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2W (Ta) |
| Maximum Pulse Drain Current | 64A |
| Maximum Total Gate Charge | 11nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 4.6nC |
| Typical Gate to Source Charge | 500pC |
