(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
IRLM220ATF
onsemi

IRLM220ATF

MFR #IRLM220ATF

FPN#IRLM220ATF-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200V 1.13A (Ta) SOT223 T/R
Datasheet
150256-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRLM220A
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance430pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current1.13A (Ta)
Maximum Drain to Source Resistance800 mOhm @ 570mA, 5V
Maximum Gate to Source Threshold Voltage100mV @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2W (Tc)
Maximum Pulse Drain Current9A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.4nC
Typical Gate to Source Charge2nC