(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
IRLL2705TRPBF
Infineon

IRLL2705TRPBF

MFR #IRLL2705TRPBF

FPN#IRLL2705TRPBF-FL

MFRInfineon

Part DescriptionN-Channel 55 V 28A (Tc) 68W (Tc) Surface Mount D-Pak
Datasheet
46848-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRLL2705PBF
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption TypeRoHS (2015/863), Unknown
ROHS ChinaNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage55V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance870pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current3.8A (Ta)
Maximum Drain to Source Resistance40 mOhm @ 3.8A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current30A
Maximum Total Gate Charge48nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 66% from Suppliers use this Dimension
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.7nC
Typical Gate to Source Charge3.5nC