| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRL540 |
| Packaging Type | Tube |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Affected |
| Package Type | TO-220AB |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 4V, 5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±10V |
| Input Capacitance | 2200pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 28A (Tc) |
| Maximum Drain to Source Resistance | 77 mOhm @ 17A, 5V |
| Maximum Gate to Source Threshold Voltage | 2V @ 250µA |
| Maximum Junction Temperature | 175°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 150W (Tc) |
| Maximum Pulse Drain Current | 110A |
| Maximum Total Gate Charge | 64nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 27nC |
| Typical Gate to Source Charge | 9.4nC |
