IRFR3910
MFR #IRFR3910
FPN#IRFR3910-FL
MFRInfineon
Part DescriptionMOSFET N-CH 100V 16A DPAK
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRFR3910 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Not Compliant |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 640pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 16A (Tc) |
| Maximum Drain to Source Resistance | 115 mOhm @ 10A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 79W (Tc) |
| Maximum Pulse Drain Current | 60A |
| Maximum Total Gate Charge | 44nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | PG-TO252-3-901 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 21nC |
| Typical Gate to Source Charge | 6.2nC |