IRF7530TRPBF
MFR #IRF7530TRPBF
FPN#IRF7530TRPBF-FL
MFRInfineon
Part DescriptionMOSFET 2N-CH 20V 5.4A MICRO8
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRF7530 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 4000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 4.5V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 1310pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 5.4A |
| Maximum Drain to Source Resistance | 30 mOhm @ 5.4A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.3W |
| Maximum Pulse Drain Current | 40A |
| Maximum Total Gate Charge | 26nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | Micro8™ |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3.4nC |
| Typical Gate to Source Charge | 3.4nC |