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IRF7303PBF
Infineon

IRF7303PBF

MFR #IRF7303PBF

FPN#IRF7303PBF-FL

MFRInfineon

Part DescriptionMOSFET 2N-CH 30V 4.9A 8-SOIC
Datasheet
46768-Datasheet
Quote Onlymore info
Multiples of: 3800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRF7303
Packaging TypeTube
Packaging Quantity3800
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance520pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.9A
Maximum Drain to Source Resistance50 mOhm @ 2.4A, 10V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2W
Maximum Pulse Drain Current20A
Maximum Total Gate Charge25nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SO
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge2.9nC