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onsemi

IMD10AMT1G

MFR #IMD10AMT1G

FPN#IMD10AMT1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
Datasheet
46673-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIMD10AMT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R110 kOhm, 100 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R2N/A
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage300mV @ 1mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base Voltage5V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation285mW
Minimum DC Current Gain100 @ 1mA, 5V, 68 @ 100mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeSC-74R
Resistor Ratio R1 R2N/A
Technology TypeSI
Transistor TypeArray