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HUF76407D3ST
onsemi

HUF76407D3ST

MFR #HUF76407D3ST

FPN#HUF76407D3ST-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 12A (Tc) TO-252-3 T/R
Datasheet
46500-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHUF76407D3S
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance350pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current12A (Tc)
Maximum Drain to Source Resistance92 mOhm @ 13A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation38W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge11.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC
Typical Gate to Source Charge1.2nC