(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

HGTG7N60A4D

MFR #HGTG7N60A4D

FPN#HGTG7N60A4D-FL

MFRonsemi

Part DescriptionIGBT 600 V 34 A 125 W Through Hole TO-247
Datasheet
46318-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG7N60A4D
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge37nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current34A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 7A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation125W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
Package TypeTO-247-3LD
Pulsed Collector Current56A
Reverse Recovery Time34ns
Switching Off Delay Time100ns
Switching Off Energy60µJ
Switching On Delay Time11ns
Switching On Energy55µJ
Technology TypeN/A