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FQU9N25TU
onsemi

FQU9N25TU

MFR #FQU9N25TU

FPN#FQU9N25TU-FL

MFRonsemi

Part DescriptionN-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Datasheet
45522-Datasheet
Quote Onlymore info
Multiples of: 5040more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQU9N25
Packaging TypeTube
Packaging Quantity5040
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance700pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7.4A (Tc)
Maximum Drain to Source Resistance420 mOhm @ 3.7A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 55W (Tc)
Maximum Pulse Drain Current29.6A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.5nC
Typical Gate to Source Charge3.8nC