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FQU13N10LTU
onsemi

FQU13N10LTU

MFR #FQU13N10LTU

FPN#FQU13N10LTU-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 10A (Tc) IPAK Tube
Datasheet
192683-Datasheet
Quote Onlymore info
Multiples of: 5040more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQU13N10L
Packaging TypeTube
Packaging Quantity5040
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance520pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10A (Tc)
Maximum Drain to Source Resistance180 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 40W (Tc)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge2nC