(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FQP47P06
onsemi

FQP47P06

MFR #FQP47P06

FPN#FQP47P06-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 47A (Tc) TO-220-3
Datasheet
165654-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP47P06
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance3600pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current47A (Tc)
Maximum Drain to Source Resistance26 mOhm @ 23.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation160W (Tc)
Maximum Pulse Drain Current188A
Maximum Total Gate Charge110nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge44nC
Typical Gate to Source Charge18nC