
FQP30N06L
MFR #FQP30N06L
FPN#FQP30N06L-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 32A (Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FQP30N06L |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Obsolete |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
RoHs China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1040pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 32A (Tc) |
Maximum Drain to Source Resistance | 35 mOhm @ 16A, 10V |
Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 79W (Tc) |
Maximum Pulse Drain Current | 128A |
Maximum Total Gate Charge | 20nC |
Maximum Total Gate Charge Test Voltage | 5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 8.5nC |
Typical Gate to Source Charge | 3.5nC |