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FQN1N60CTA
onsemi

FQN1N60CTA

MFR #FQN1N60CTA

FPN#FQN1N60CTA-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 300mA (Tc) TO-226-3 Fan-Fold
Datasheet
99815-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQN1N60C
Packaging TypeFan-Fold
Packaging Quantity2000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance170pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current300mA (Tc)
Maximum Drain to Source Resistance11.5 Ohm @ 150mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta), 3W (Tc)
Maximum Pulse Drain Current1.2A
Maximum Total Gate Charge6.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-92-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge700pC